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采用射频磁控溅射法在单晶SrTiO3 (STO)衬底和硅(Si)衬底上制备出不同取向的SrRuO3 (SRO)薄膜,对薄膜的残余应力进行了分析,并研究了应力对不同取向SRO薄膜磁学性能与电输运特性的影响.根据X射线衍射(XRD)结果分析可知,Si基SRO薄膜为多晶单轴取向薄膜,且应力来源主要为热失配拉应力;STO基SRO薄膜为外延薄膜,其应力主要为热失配压应力和外延压应力;磁学性能测试表明,(001)取向SRO薄膜比(110)取向薄膜拥有更高的居里温度TC;压应力提高了(001)取向SRO薄膜的TC,却降低了(110)取向薄膜的TC.电阻性能测试表明,对于在同种类型衬底上沉积的SRO薄膜,(001)取向的薄膜的剩余表面电阻比(RRR)高于(110)取向的薄膜.另外,拉应力引起了薄膜微结构的无序度增加,弱化了表面电阻率的温度依赖性,提高了金属绝缘体转变温度(TMI).

参考文献

[1] Allen PB.;Chauvet O.;Forro L.;Jarlborg T.;Junod A.;Revaz B.;Santi G.;Berger H..TRANSPORT PROPERTIES, THERMODYNAMIC PROPERTIES, AND ELECTRONIC STRUCTURE OF SRRUO3[J].Physical Review.B.Condensed Matter,19968(8):4393-4398.
[2] Z. H. Tang;M. H. Tang;X. S. Lv;H. Q. Cai;Y. G. Xiao;C. P. Cheng;Y. C. Zhou;J. He.Enhanced magnetoelectric effect in La_(0.67)Sr_(0.33)MnO_3/PbZr_(0.52)Ti_(0.48)O_3 multiferroic nanocomposite films with a SrRuO_3 buffer layer[J].Journal of Applied Physics,201316(16):164106-1-164106-6.
[3] Herranz G;Sanchez F;Fontcuberta J;Garcia-Cuenca MV;Ferrater C;Varela M;Angelova T;Cros A;Cantarero A.Domain structure of epitaxial SrRuO3 thin films[J].Physical review, B. Condensed matter and materials physics,200517(17):4411-1-4411-8-0.
[4] Shen, Xuan;Qiu, Xiangbiao;Su, Dong;Zhou, Shengqiang;Li, Aidong;Wu, Di.Thickness-dependent metal-insulator transition in epitaxial SrRuO3 ultrathin films[J].Journal of Applied Physics,20151(1):015307-1-015307-6.
[5] X. W. Wang;X. Wang;Y. Q. Zhang;Y. L. Zhu;Z. J. Wang;Z. D. Zhang.Magnetic anisotropy and metal-insulator transition in SrRuO_(3) thin films at different growth temperatures[J].Journal of Applied Physics,201011(11):113925-1-113925-5.
[6] R. Palai;H. Huhtinen;J. F. Scott;R. S. Katiyar.Observation of spin-glass-like behavior in SrRuO3 epitaxial thin films[J].Physical review, B. Condensed matter and materials physics,200910(10):104413:1-104413:6.
[7] Aso, Ryotaro;Kan, Daisuke;Fujiyoshi, Yoshifumi;Shimakawa, Yuichi;Kurata, Hiroki.Strong Dependence of Oxygen Octahedral Distortions in SrRuO3 Films on Types of Substrate-Induced Epitaxial Strain[J].Crystal growth & design,201412(12):6478-6485.
[8] Wenlai Lu;Wen Dong Song;Kaihua He;Jianwei Chai;Cheng-Jun Sun;Gan-Moog Chow;Jing-Sheng Chen.The role of octahedral tilting in the structural phase transition and magnetic anisotropy in SrRuO_3 thin film[J].Journal of Applied Physics,20136(6):063901-1-063901-7.
[9] Baomin Xu;Yaohong Ye;L. Eric Cross.Dielectric properties and field-induced phase switching of lead zirconate titanate stannate antiferroelectric thick films on silicon substrates[J].Journal of Applied Physics,20005(5):2507-2515.
[10] Yamanaka S;Maekawa T;Muta H;Matsuda T;Kobayashi S;Kurosaki K.Thermophysical properties of SrHfO3 and SrRuO3[J].International Journal of Quantum Chemistry,200410(10):3484-3489.
[11] Kumar S;Majumdar P.Singular effect of disorder on electronic transport in strongly coupled electron-phonon systems[J].Physical review letters,200513(13):6601-1-6601-4-0.
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