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为从Si-Al-Sn合金中有效分离初晶硅,本研究提出并实现了三元合金定向生长块体硅的技术.通过考察冷却速度、合金成分、温度梯度与晶体生长速度比值(G/R)等参数及其影响机制,确定促进块体硅稳定生长的有利条件;对比Si-Al、Si-Sn二元合金体系,采用成分过冷理论分析金属Sn对三元合金中块体硅生长行为的影响;采用电子探针显微分析仪考察块体硅微观组织形貌与杂质分布.研究结果表明:定向凝固方法能有效分离块体硅,同时抑制块体硅内金属夹杂物生成,并将杂质含量控制在其固溶度范围内,成为一种有效分离、回收高纯初晶硅的新途径.

参考文献

[1] T. YOSHIKAWA;K. MORiTA.Refining of Si by the solidification of Si-Al melt with electromagnetic force[J].ISIJ International,20057(7):967-971.
[2] Jiayan Li;Yao Liu;Yi Tan;Yaqiong Li;Lei Zhang;Shenrui Wu;Pengjun Jia.Effect of tin addition on primary silicon recovery in Si-Al melt during solidification refining of silicon[J].Journal of Crystal Growth,2013May 15(May 15):1-6.
[3] Yaqiong Li;Yi Tan;Jiayan Li.Effect of Sn content on microstructure and boron distribution in Si-Al alloy[J].Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics,2014:85-90.
[4] 介万奇.凝固原理的前沿进展及其应用[J].中国材料进展,2014(6):321-326.
[5] Yuki Nishi;Youngjo Fang;Kazuki Morita.Control of Si Crystal Growth during Solidification of Si-Al Melt[J].Materials transactions,20107(7):1227-1230.
[6] Xiaodong Ma;Takeshi Yoshikawa;Kazuki Morita.Si growth by directional solidification of Si-Sn alloys to produce solar-grade Si[J].Journal of Crystal Growth,2013Aug.15(Aug.15):192-196.
[7] Safarian, J.;Kolbeinsen, L.;Tangstad, M..Thermodynamic activities in silicon binary melts[J].Journal of Materials Science,201214(14):5561-5580.
[8] JAFAR SAFARIAN;LEIV KOLBEINSEN;MERETE TANGSTAD.Liquidus of Silicon Binary Systems[J].Metallurgical and Materials Transactions, B. Process metallurgy and materials processing science,20114(4):852-874.
[9] Takeshi Yoshikawa;Kazuki Morita.Solid Solubilities and Thermodynamic Properties of Aluminum in Solid Silicon[J].Journal of the Electrochemical Society,20038(8):G465-G468.
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