通过背光照辅助电化学腐蚀的方法,在N型轻掺杂的(100)单晶硅上制备了多孔硅模板.模板孔端口呈类正方形结构,孔边长约为2μm,孔深约50 μm.然后在制备的N型多孔硅模板中电沉积制备了磁性镍微米管.与绝缘性AAO模板中金属从孔底部开始生长不同,在半导体性质的N型多孔硅模板中,镍沿着孔壁均匀生长,并随着沉积时间的延长,由颗粒状逐渐生长为微米管,镍的晶型没有发生变化.由于镍微米管的缺陷和晶界比镍颗粒更少,畴壁位移更容易,所以具有更小的矫顽力.同时受强烈的退磁能影响,外加磁场在垂直和平行镍微米管方向时测得的磁滞回线表现出明显的磁各向异性.
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