采用高温熔融法制备了 Bi2O3-SiO2玻璃及玻璃陶瓷,测试了样品的近红外光区及可见光区的发射谱、激发谱及荧光寿命。在808 nm波长光的激发下, Bi2O3-SiO2玻璃及玻璃陶瓷中均发现了近红外发光。当Bi2O3含量较低时(30mol%、40mol%、50mol%),发光中心位于1336 nm(或1300 nm),为宽带发光；随Bi2O3含量的增加,1070 nm左右出现了窄带近红外发光峰,且逐渐成为最强发光峰,与此同时,1336 nm(或1300 nm)的宽带发光转变为窄带发光。1336 nm (或1300 nm)与1070 nm发射峰的荧光寿命及激发谱均存在较大的区别,初步分析认为这两个发射峰归属于不同的发光中心,1336 nm(或1300 nm)发射峰源于低价态Bi离子。
Bi2O3-SiO2 glasses and glass ceramics were prepared by melting method. Infrared and VIS luminescence spectra, excitation spectra and fluorescence decay curves were measured. Near infrared (NIR) luminescence of Bi2O3-SiO2 glasses and glass ceramics was observed under 808 nm Laser Diode pumping. When the content of Bi2O3 is low (30mol%, 40mol%, 50mol%), NIR luminescence peak at 1336 nm (or 1300 nm) with full width at half maxi-mum (FWHM) about 200 nm is observed. With the increase of Bi2O3 content, another peak at about 1070 nm with narrow FWHM appears and becomes the main peak, while the FWHM of the NIR emission centered at 1336 nm (or 1300 nm) decreases to only tens of nanometer. Two emission bands have different excitation bands and lifetime. We propose NIR emissions located at 1070 nm and 1336 nm (or 1300 nm) originate from different bismuth centers. The infrared emission peaked at about 1336 nm (or 1300 nm) derives from low valence Bi ions.
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