一维SiC纳米材料由于具有独特的电学、光学及力学性能,在新型纳米光电子器件、生物医学传感器、储能和材料增韧等领域拥有广阔的应用前景.介绍了基于气相-液相-固相(VLS)、固相-液相-固相(SLS)、气相-固相(VS)和氧化物辅助生长的生长机制(OAG)制备一维SiC纳米材料的方法,并分析了各种方法的特点.一维SiC纳米材料的制备方法主要存在以下几个问题:(1)工艺过程中温度高(模板法、激光烧蚀法、电弧放电法、热蒸发法、碳热还原法)或压力大(溶剂热法),涉及过程复杂;(2)产物中常含有金属杂质(如金属气-液-固(VLS)催化生长法)或表面包覆Si02层(激光烧蚀法、电弧放电法、碳热还原法),形貌不均一;(3)产量低(模板法、溶剂热法).这些问题制约了高纯一维SiC纳米材料的制备及其本征性能的研究,也不利于实现一维SiC纳米材料的规模化生产.因此,发展新型低成本高纯一维SiC纳米材料的制备技术对于推动一维SiC纳米材料的研究、规模化生产以及在相关高科技领域中的应用具有十分重要的意义.
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