采用直流反应磁控溅射法在不同氧分压气氛下制备了氧化钒薄膜,并进行后续真空退火处理.分别利用X-射线衍射仪,扫描电子显微镜和综合物性仪分析薄膜的相成分、表面形貌以及电性能.结果表明:随着氧分压的增加,450℃退火1h的薄膜逐渐由非晶态转变为VO2(M),VO2(M,B)和V6O13的混合结构,并且晶化程度逐渐提高.氧分压6.67％的薄膜相转变温度(TMST)接近52℃,SEM分析表明,微裂纹的存在为相转变时应力释放提供空间,降低了TMST.氧分压10％的薄膜具有-2.38 ％/K的电阻温度系数(TCR)值和1.67×104 Ω的室温电阻值,满足制备非致冷红外探测器的要求.
Vanadium oxide thin films were prepared by DC reactive magnetron sputtering with the different oxygen partial pressure accompanied by the vacuum post annealing.The phase composition,surface morphology and electrical properties of the thin films were characterized and measured using X-ray diffraction (XRD),Scanning Electron Microscope (SEM) and Quantum Design Versa-lab comprehensive physical analyzer,respectively.The results show that,for the films annealed at 450 ℃ for 1 hours,the amorphous structure gradually transferred to VO2 (M),VO2 (M,B) and V6O13 mixed structure,the degree of crystallization was improved with increasing the oxygen partial pressure.The phase transition temperature (TMST) is close to 52 ℃ for the film at a partial pressure of oxygen 6.67％.Combining with SEM analysis,it shows that the existence of microcracks can provide enough space for stress release during the phase transition,which leads to the decrease of TMST.In addition,it was found that the TCR is about-2.38％/K and the room temperature resistance is about 1.67× 104 Ω for the thin film prepared under a oxygen partial pressure of 10％,which can meet the demands of the fabrication for uncooled infrared detector.
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