采用真空蒸镀的方法制备磷掺杂多晶硅薄膜,研究了磷含量对多晶硅薄膜的表面形貌、组织结构、晶粒尺寸及晶化率的影响.结果表明:随着磷掺杂分数的增加,多晶硅薄膜的晶粒尺寸和晶化率表现出先增加后降低的趋势,当磷掺杂分数为1%时,薄膜晶粒尺寸达到最大值,为0.55 μm,晶化率为96.82%,且晶粒的均匀性最佳.
参考文献
[1] | 黄庆举;林继平;魏长河;姚若河.硅太阳能电池的应用研究与进展[J].材料开发与应用,2009(6):93-96. |
[2] | Akhtar J;Lamichhane SK;Sen P.Thermal-induced normal grain growth mechanism in LPCVD polysilicon film[J].Materials science in semiconductor processing,20054(4):476-482. |
[3] | Schropp REI.;Stannowski B.;Rath JK..New challenges in thin film transistor (TFT) research[J].Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites,2002Pt.2(Pt.2):1304-1310. |
[4] | Zhou YQ;Zhou BQ;Gu JH;Zhu MF;Liu FZ.Comparison of growth mechanisms of silicon thin films prepared by HWCVD with PECVD[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,20085(5):564-567. |
[5] | 王宙;曹健;室谷贵之;付传起.铝诱导晶化真空蒸镀多晶硅薄膜的研究[J].功能材料,2012(05):573-575. |
[6] | Ching-Hsun Chao;Ko-Wei Weng;Horng-Long Cheng;Chien-Hung Chan;Shui-Yang Lien.Boron induced recrystallization of amorphous silicon film by a rapid thermal process[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,201024(24):7480-7482. |
[7] | R. Mahamdi;L. Saci;F. Mansour;P. Temple-Boyer;E. Scheid;L. Jalabert.Boron Diffusion And Activation In Polysilicon Multilayer Films For P~+ Mos Structure: Characterization And Modeling[J].Microelectronics journal,20091(1):1-4. |
[8] | Sadoh T;Nagatomo K;Tsunoda I;Kenjo A;Enokida T;Miyao M.Enhanced crystal nucleation in a-Si on SiO2 by local Ge doping[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,20040(0):99-102. |
[9] | Zaghdoudi, M;Rogel, R;Alzaied, N;Fathallah, M;Mohammed-Brahim, T.High polysilicon TFT field effect mobility reached thanks to slight phosphorus content in the active layer[J].Materials science & engineering. C, Biomimetic and supramolecular systems,20085/6(5/6):1010-1013. |
[10] | Shinya Yamaguchi;Seong-kee Park;Nobuyuki Sugii;Kiyokazu Nakagawa;Masanobu Miyao.Ge-induced enhancement of solid-phase crystallization of Si on SiO{sub}2[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,20001/2(1/2):195-198. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分:
-
10%
-
20%
-
30%
-
40%
-
50%