B-C-N 材料的提出是由于氮化硼和碳材料具有特殊的优异性能,通过对不同结构 B-C-N 材料的研究发现,组成结构的差异导致其物理化学性能发生很大变化。其中,h-BCN 由于其禁带宽度和半导体特性可调而尤为引人关注。h-BCN 有平面和层状两种结构,基于目前两种结构的 h-BCN 制备方法的最新研究进展,简述了材料的结构、生长机理、性质和应用前景,分析了反应原料、温度和时间对 h-BCN 形成的影响,最后介绍了 h-BCN 亟待解决的问题和发展方向。
To combine special and excellent performance of boron nitride and carbon materials,boron-carbon-nitrogen (B-C-N)material was synthesized and more and more attention was paid to it.Researches showed chemical and physical performance of B-C-N would change with its composition and structure.Among these adjustable perfor-mance,band gap and semiconductor characteristic are most dazzling.Hexagonal structure of B-C-N (h-BCN)has two different structures,i.e.plane structure and layer structure.Synthesis methods and mechanisms of these two diffe-rent h-BCN are summarized,their structures,performance and application prospect are illustrated,effect of reaction conditions (such as raw materials,reaction time and temperature)to their structure is analyzed and their direction of development and difficulties are predicted.
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