采用反应溅射法制备涂层导体用CeO2过渡层,重点对不同水分压下制备的CeO2种子层,以及YBCO超导层沉积过程中CeO2帽子层的稳定性进行了分析.采用X射线分析相组成变化以及晶体取向,通过扫描电镜观察表面形貌.结果表明,水分压对CeO2生长影响较大,水分压太小会导致缺氧相CeO2-x(0<x<0.5)生成.虽然后续富氧退火处理能转变成CeO2,但由于体积变化会萌生裂纹,其薄膜完整性受到破坏.另外,高温的YBCO生长工艺亦会引起CeO2帽子层与YBCO反应生成BaCeO3,对后续的YBCO晶体取向和超导性能产生不利影响.
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