半导体学报（英文版）, 2016, 37(7): 63-67. doi: 10.1088/1674-4926/37/7/074005

基金项目: Project supported by the National Major Science and Technology Special Project (No.2013ZX02305005-002),and the National Natural Science Foundation Major Program (No.51490681).

Theoretical modification of the negative Miller capacitance during the switching transients of IGBTs

Keywords： IGBT

参考文献

[1]	Mao Kun;Qiao Ming;Zhang Bo;Li Zhaoji.A 800 V dual conduction paths segmented anode LIGBT with low specific on-resistance and small shift voltage[J].半导体学报（英文版）,2014(05):36-41.
[2]	Zhu Liheng;Chen Xingbi.A novel double trench reverse conducting IGBT with robust freewheeling switch[J].半导体学报（英文版）,2014(8):79-83.
[3]	Zhang Wenliang;Zhu Yangjun;Lu Shuojin;Tian Xiaoli.The negative differential resistance characteristics of an RC-IGBT and its equivalent circuit model[J].半导体学报（英文版）,2014(02):62-66.
[4]	Omura I.;Ohashi H..IGBT negative gate capacitance and related instability effects[J].IEEE Electron Device Letters,199712(12):622-624.

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