半导体学报（英文版）, 2016, 37(5): 78-83. doi: 10.1088/1674-4926/37/5/055002

基金项目: Project supported by the National Natural Science Foundation of China (No.61334002), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (No.ZHD201206), and the Program for New Century Excellent Talents in University (No.NCET-12-0915).

Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

Keywords： AlGaN/GaN

参考文献

[1]	Y.-F. Wu;A. Saxler;M. Moore;R. P. Smith;S. Sheppard;P. M. Chavarkar;T. Wisleder;U. K. Mishra;P. Parikh.30-W/mm GaN HEMTs by Field Plate Optimization[J].IEEE Electron Device Letters,20043(3):117-119.
[2]	I. Daumiller;C. Kirchner;M. Kamp;K. J. Ebeling;E. Kohn.Evaluation of the temperature stability of AlGaN/GaN heterostructure FET's[J].IEEE Electron Device Letters,19999(9):448-450.
[3]	Cao Mengyi;Lu Yang;Wei Jiaxing;Zheng Jiaxin;Ma Xiaohua;Hao Yue.Ka-band full-360° analog phase shifter with low insertion loss[J].半导体学报（英文版）,2014(10):114-118.
[4]	Xie Yuanbin;Quan Si;Ma Xiaohua;Zhang Jincheng;Li Qingmin;Hao Yue.Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMT D flip-flop using fluorine plasma treatment*[J].半导体学报,2011(06):69-72.
[5]	Quan Si;Hao Yue;Ma Xiaohua;Xie Yuanbin;Ma Jigang.Enhancement-mode AlGaN/GaN HEMTs fabricated by fluorine plasma treatment[J].半导体学报,2009(12):21-24.
[6]	Dawei Yan;Jinping Jiao;Jian Ren;Guofeng Yang;Xiaofeng Gu.Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodes[J].Journal of Applied Physics,201314(14):144511-1-144511-5.

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Monolithically integrated enhancement/depletion-mode AlGaN/GaN HEMTs SRAM unit and voltage level shifter using fluorine plasma treatment

参考文献