半导体学报（英文版）, 2016, 37(5): 52-55. doi: 10.1088/1674-4926/37/5/054006

基金项目: Project supported in part by the National Natural Science Foundation of China (No.51237001).

An LDMOS with large SOA and low specific on-resistance

Keywords： LDMOS

参考文献

[1]	Lyu, X.;Chen, X..An Ultralow Specific ON-Resistance LDMOST Using Charge Balance by Split p-Gate and n-Drift Regions[J].IEEE Transactions on Electron Devices,201311(11):3821-3826.
[2]	Reggiani, S.;Baccarani, G.;Gnani, E.;Gnudi, A.;Denison, M.;Pendharkar, S.;Wise, R.;Seetharaman, S..Explanation of the Rugged LDMOS Behavior by Means of Numerical Analysis[J].IEEE Transactions on Electron Devices,200911(11):2811-2818.
[3]	Yang F.-J.;Gong J.;Su R.-Y.;Huo K.-H..A 700-V Device in High-Voltage Power ICs With Low On-State Resistance and Enhanced SOA[J].IEEE Transactions on Electron Devices,20139(9):2847-2853.

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