半导体学报（英文版）, 2016, 37(2): 94-96. doi: 10.1088/1674-4926/37/2/024009

基金项目: Project supported by the National Natural Science Foundation of China (No.61306113).

A high performance InAlN/GaN HEMT with low Ron and gate leakage

Keywords： InAlN

参考文献

[1]	V. Adivarahan;J. Yang;A. Koudymov;G. Simin;M. Asif Khan.Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19 W/mm[J].IEEE Electron Device Letters,20058(8):535-537.
[2]	Lee, D. S.;Chung, J. W.;Wang, H.;Gao, X.;Guo, S.;Fay, P.;Palacios, T..245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment[J].IEEE Electron Device Letters,20116(6):755-757.
[3]	Yong Cai;Yugang Zhou;Kevin J. Chen;Kei May Lau.High-Performance Enhancement-Mode AlGaN/GaN HEMTs Using Fluoride-Based Plasma Treatment[J].IEEE Electron Device Letters,20057(7):435-437.
[4]	Lin, Y.-S.;Lain, Y.-W.;Hsu, S. S. H..AlGaN/GaN HEMTs With Low Leakage Current and High On/Off Current Ratio[J].IEEE Electron Device Letters,20102(2):102-104.
[5]	Sun, H.;Alt, A. R.;Benedickter, H.;Feltin, E.;Carlin, J.-F.;Gonschorek, M.;Grandjean, N. R.;Bolognesi, C. R..205-GHz (Al,In)N/GaN HEMTs[J].IEEE Electron Device Letters,20109(9):957-959.
[6]	Wang, R.;Saunier, P.;Xing, X.;Lian, C.;Gao, X.;Guo, S.;Snider, G.;Fay, P.;Jena, D.;Xing, H..Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance[J].IEEE Electron Device Letters,201012(12):1383-1385.
[7]	Liu Bo;Feng Zhihong;Zhang Sen;Dun Shaobo;Yin Jiayun;Li Jia;Wang Jingjing;Zhang Xiaowei;Fang Yulong;Cai Shujun.A 4.69-W/mm output power density InAlN/GaN HEMT grown on sapphire substrate[J].Journal of Semiconductors,201112(12):124003:1-124003:4.
[8]	Gu Guodong;Cai Yong;Feng Zhihong;Liu Bo;Zeng Chunhong;Yu Guohao;Dong Zhihua;Zhang Baoshun.Enhancement-mode InAlN/GaN MISHEMT with low gate leakage current[J].半导体学报（英文版）,2012(06):28-30.

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