半导体学报（英文版）, 2016, 37(11): 35-39. doi: 10.1088/1674-4926/37/11/114002

基金项目: Project supported by the National Natural Sciences Foundation of China(Nos.61376090,61306008) and the National High Technology Program of China (No.2014AA032606).

AlGaN/GaN high electron mobility transistors with selective area grown p-GaN gates

Keywords： AlGaN/GaN

参考文献

[1]	O. Ambacher;B. Foutz;J. Smart.Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures[J].Journal of Applied Physics,20001(1):334-344.
[2]	Tan Xin;Lü Yuanjie;Gu Guodong;Wang Li;Dun Shaobo;Song Xubo;Guo Hongyu.High performance AlGaN/GaN HEMTs with AlN/SiNx passivation[J].半导体学报（英文版）,2015(7):94-97.
[3]	Wang Zheli;Zhou Jianjun;Kong Yuechan;Kong Cen;Dong Xun;Yang Yang;Chen Tangsheng.Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator[J].半导体学报（英文版）,2015(9):62-65.
[4]	Su, L.-Y.;Lee, F.;Huang, J.J..Enhancement-Mode GaN-Based High-Electron Mobility Transistors on the Si Substrate With a P-Type GaN Cap Layer[J].IEEE Transactions on Electron Devices,20142(2):460-465.
[5]	Hwang, I.;Kim, J.;Choi, H. S.;Choi, H.;Lee, J.;Kim, K. Y.;Park, J.-B.;Lee, J. C.;Ha, J.;Oh, J.;Shin, J.;Chung, U..p-GaN Gate HEMTs With Tungsten Gate Metal for High Threshold Voltage and Low Gate Current[J].IEEE Electron Device Letters,20132(2):202-204.
[6]	Deguchi, T.;Kikuchi, T.;Arai, M.;Yamasaki, K.;Egawa, T..High On/Off Current Ratio p-InGaN/AlGaN/GaN HEMTs[J].IEEE Electron Device Letters,20129(9):1249-1251.
[7]	Lanford W.B.;Tanaka T.;Otoki Y.;Adesida I..Recessed-gate enhancement-mode GaN HEMT with high threshold voltage[J].Electronics Letters,20057(7):449-450.
[8]	Lee, Y.-C.;Kao, T.-T.;Merola, J.J.;Shen, S.-C..A Remote-Oxygen-Plasma Surface Treatment Technique for III-Nitride Heterojunction Field-Effect Transistors[J].IEEE Transactions on Electron Devices,20142(2):493-497.
[9]	T. Fujii;N. Tsuyukuchi;Y. Hirose;M. Iwaya;S. Kamiyama;H. Amano;I. Akasaki.Fabrication of enhancement-mode Al_xGa_1-xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact[J].Physica Status Solidi. C, Conferences and critical reviews,20077(7):2708-2711.
[10]	Uemoto Y.;Hikita M.;Ueno H.;Matsuo H.;Ishida H.;Yanagihara M.;Ueda T.;Tanaka T.;Ueda D..Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation[J].IEEE Transactions on Electron Devices,200712(12):3393-3399.

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