欢迎登录材料期刊网

材料期刊网

高级检索

参考文献

[1] Cai Jiangzheng;Zhang Sumin;Yuan Jia;Shang Xinchao;Chen Liming;Hei Yong.A 320 mV, 6 kb subthreshold 10T SRAM employing voltage lowering techniques[J].半导体学报(英文版),2015(06):136-141.
[2] Vijay Kumar Sharma;Manisha Pattanaik.VLSI scaling methods and low power CMOS buffer circuit[J].半导体学报(英文版),2013(09):92-99.
[3] DUAN ShuKai;HU XiaoFang;WANG LiDan;LI ChuanDong;MAZUMDER Pinaki.Memristor-based RRAM with applications[J].中国科学:信息科学(英文版),2012(6):1446-1460.
[4] Matthew D. Pickett;Dmitri B. Strukov;Julien L. Borghetti;J. Joshua Yang;Gregory S. Snider;Duncan R. Stewart;R. Stanley Williams.Switching dynamics in titanium dioxide memristive devices[J].Journal of Applied Physics,20097(7):074508-1-074508-6.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%