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[1] Lesecq, M.,Hoel, V.,Lecavelier des Etangs-Levallois, A.,Pichonat, E.,Douvry, Y.,De Jaeger, J. C..High Performance of AlGaN/GaN HEMTs Reported on Adhesive Flexible Tape[J].IEEE Electron Device Letters,20112(2):143-145.
[2] Joh, J.;del Alamo, J. A..A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors[J].IEEE Transactions on Electron Devices,20111(1):132-140.
[3] V.Szekely.Enhancing reliability with thermal transient testing[J].Microelectronics and reliability,20024/5(4/5):629-640.
[4] Zhang Guang-Chen;Feng Shi-Wei;Zhou Zhou;Li Jing-Wan;Guo Chun-Sheng.Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method[J].中国物理B(英文版),2011(2):434-439.
[5] Ma Lin;Feng Shiwei;Zhang Yamin;Deng Bing;Yue Yuan.Evaluation of the drain-source voltage effect on AlGaAs/InGaAs PHEMTs thermal resistance by the structure function method[J].半导体学报(英文版),2014(09):60-64.
[6] Bagnoli P.E.;Casarosa C.;Ciampi M.;Dallago E..Thermal resistance analysis by induced transient (TRAIT) method forpower electronic devices thermal characterization. I. Fundamentals andtheory[J].IEEE Transactions on Power Electronics,19986(6):1208-1219.
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