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[1] Yair Ein-Eli;David Starosvetsky.Review on copper chemical-mechanical polishing (CMP) and post-CMP cleaning in ultra large system integrated (ULSI) - an electrochemical perspective[J].Electrochimica Acta,20075(5):1825-1838.
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[3] Po-Lin Chen;Jyh-Herng Chen;Ming-Shih Tsai;Bau-Tong Dai;Ching-Fa Yeh.Post-Cu CMP cleaning for colloidal silica abrasive removal[J].Microelectronic engineering,20044(4):352-360.
[4] R. Prasanna Venkatesh;Tae-Young Kwon;Y. Nagendra Prasad;S. Ramanathan;Jin-Goo Park.Characterization of TMAH based cleaning solution for post Cu-CMP application[J].Microelectronic engineering,2013Feb.(Feb.):74-80.
[5] Miao, Yingxin;Wang, Shengli;Wang, Chenwei;Liu, Yuling;Sun, Mingbin;Chen, Yang.Effect of chelating agent on benzotriazole removal during post copper chemical mechanical polishing cleaning[J].Microelectronic engineering,2014Nov.(Nov.):18-23.
[6] Gao Baohong;Zhu Yadong;Liu Yuling;Wang Shengli;Zhou Qiang;Liu Xiaoyan.A new cleaning process combining non-ionic surfactant with diamond film electrochemical oxidation for polished silicon wafers[J].Journal of Semiconductors,20107(7):076002:1-076002:4.
[7] Shusen Peng;Wenjie Zhao;He Li;Zhixiang Zeng;Qunji Xue;Xuedong Wu.The enhancement of benzotriazole on epoxy functionalized silica sol-gel coating for copper protection[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,2013Jul.1(Jul.1):284-290.
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