半导体学报（英文版）, 2015, 36(6): 93-98. doi: 10.1088/1674-4926/36/6/064013

基金项目: Project supported by the Chinese National Key Project (No.2012ZX02502).

Design of high reliability RF-LDMOS by suppressing the parasitic bipolar effect using enhanced p-well and double epitaxy

Keywords： RF power

参考文献

[1]	De Souza M. M.;Fioravanti P.;Cao G.;Hinchley D..Design for Reliability: The RF Power LDMOSFET[J].IEEE transactions on device & materials reliability,20071(1):162-174.
[2]	Jorgen Olsson;Niklas Rorsman;Lars Vestling;Christian Fager;Johan Ankarcrona;Herbert Zirath;Klas-Hakan Eklund.1 W/mm RF power density at 3.2 GHz for a dual-layer RESURF LDMOS transistor[J].IEEE Electron Device Letters,20024(4):206-208.
[3]	黄晓兰;吴德馨;张耀辉;李科;王立新.功率RF LDMOS的关键参数研究[J].半导体学报,2006(z1):266-270.
[4]	K.-M.;Chen;B.-Y.;Chiu;C.-S.;Huang;G.-W..Performance Improvement in RF LDMOS Transistors Using Wider Drain Contact[J].IEEE Electron Device Letters,20139(9):1085-1087.

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