参考文献
| [1] | Strukov DB;Snider GS;Stewart DR;Williams RS.The missing memristor found.[J].Nature,20087191(7191):80-83. |
| [2] | Wouters, D. J.;Zhang, L.;Fantini, A.;Degraeve, R.;Goux, L.;Chen, Y. Y.;Govoreanu, B.;Kar, G. S.;Groeseneken, G. V.;Jurczak, M..Analysis of Complementary RRAM Switching[J].IEEE Electron Device Letters,20128(8):1186-1188. |
| [3] | Kwon, DH;Kim, KM;Jang, JH;Jeon, JM;Lee, MH;Kim, GH;Li, XS;Park, GS;Lee, B;Han, S;Kim, M;Hwang, CS.Atomic structure of conducting nanofilaments in TiO2 resistive switching memory[J].Nature nanotechnology,20102(2):148-153. |
| [4] | V. Maccaronio;F. Crupi;L.M. Procel;L. Goux;E. Simoen;L. Trojman;E. Miranda.DC and low-frequency noise behavior of the conductive filament in bipolar HfO_2-based resistive random access memory[J].Microelectronic engineering,2013Jul.(Jul.):1-5. |
| [5] | Walczyk, C.;Walczyk, D.;Schroeder, T.;Bertaud, T.;Sowinska, M.;Lukosius, M.;Fraschke, M.;Wolansky, D.;Tillack, B.;Miranda, E.;Wenger, C..Impact of Temperature on the Resistive Switching Behavior of Embedded $hbox{HfO}_{2}$-Based RRAM Devices[J].IEEE Transactions on Electron Devices,20119(9):3124-3131. |
| [6] | {Missing}.Model for the Resistive Switching Effect in MIM Structures Based on the Transmission Properties of Narrow Constrictions[J].IEEE Electron Device Letters,20106(6):609-611. |
| [7] | Avellan A;Miranda E;Schroeder D;Krautschneider W.Model for the voltage and temperature dependence of the soft breakdown current in ultrathin gate oxides[J].Journal of Applied Physics,20051(1):4104-1-4104-5-0. |
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