参考文献
| [1] | Morimoto T.;Ohguro T..Self-aligned nickel-mono-silicide technology for high-speed deep submicrometer logic CMOS ULSI[J].IEEE Transactions on Electron Devices,19955(5):915-922. |
| [2] | P. S. Lee;K. L. Pey;D. Mangelinck;J. Ding;D. Z. Chi;L. Chan.New salicidation technology with Ni(Pt) alloy for MOSFETs[J].IEEE Electron Device Letters,200112(12):568-570. |
| [3] | Tuo-Hung Hou;Tan-Fu Lei;Tien-Sheng Chao.Improvement of junction leakage of nickel silicided junction by a Ti-Capping layer[J].IEEE Electron Device Letters,199911(11):572-573. |
| [4] | L. W. Cheng;S. L. Cheng;J. Y. Chen;L. J. Chen;B. Y. Tsui.Effects of nitrogen ion implantation on the formation of nickel silicide contacts on shallow junctions[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,19990(0):412-416. |
| [5] | Akarvardar, K..Impact of NiPt Thickness Scaling on Contact Resistance From Thin-Body FD SOI to Trigate FETs[J].IEEE Electron Device Letters,20125(5):631-633. |
| [6] | S.W. Lee;S.H. Huang;S.L Cheng;P.S. Chen;W.W. Wu.Ni silicide formation on epitaxial Si_(1-y)C_y/(001) layers[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,201024(24):7394-7397. |
| [7] | Jun Luo;Zhi-Jun Qiu;Jian Deng;Chao Zhao;Junfeng Li;Wenwu Wang;Dapeng Chen;Dongping Wu;Mikael OEstling;Tianchun Ye;Shi-Li Zhang.Effects of carbon pre-silicidation implant into Si substrate on NiSi[J].Microelectronic engineering,2014May(May):178-181. |
| [8] | Edelstein A.S.;Gillespie D.J.;Cheng S.F.;Perepezko J.H.;Landry K..Reactions at amorphous SiC/Ni interfaces[J].Journal of Applied Physics,19995(5):2636-0. |
| [9] | Osamu Nakatsuka;Kazuya Okubo;Akira Sakai;Masaki Ogawa;Yukio Yasuda;Shigeaki Zaima.Improvement in NiSi/Si contact properties with C-implantation[J].Microelectronic engineering,20053/4(3/4):479-484. |
| [10] | J. Hallstedt;M. Blomqvist;P. O. A. Persson;L. Hultman;H. H. Radamson.The effect of carbon and germanium on phase transformation of nickel on Si_(1-x-y)Ge_(x)C_(y) epitaxial layers[J].Journal of Applied Physics,20045(5):2397-2402. |
| [11] | Zaima S.;Nakatsuka O.;Sakai A.;Murota J.;Yasuda Y..Interfacial reaction and electrical properties in Ni/Si and Ni/SiGe(C) contacts[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,20041/4(1/4):215-221. |
| [12] | C. Detavernier;R. L. Van Meirhaeghe;H. Bender;O. Richard;B. Brijs;K. Maex.CoSi_(2) formation in the presence of carbon[J].Journal of Applied Physics,20023(3):1207-1211. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%