半导体学报（英文版）, 2015, 36(5): 181-186. doi: 10.1088/1674-4926/36/5/056001

基金项目: Project supported by the National Key Basic Research Program of China (Nos.2010CB934300,2013CBA01900,2011CBA00607,2011CB932804),the Strategic Priority Research Program of the Chinese Academy of Sciences (No.XDA09020402),the National Integrate Circuit Research Program of China (No.2009ZX02023-003),the National Natural Science Foundation of China (Nos.61176122,61106001,61261160500,61376006),and the Science and Technology Council of Shanghai (Nos.12nm0503701,13DZ2295700,12QA1403900,13ZR1447200).

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

Keywords： PCM

参考文献

[1]	Wicker G.Nonvolatile,high density,high performance phase change memory[J].Proc SPIE,19993893:2.
[2]	Lai S.Current status of the phase change memory and its future[A].,2003:10.1.1.
[3]	Terao, M;Morikawa, T;Ohta, T.Electrical Phase-Change Memory: Fundamentals and State of the Art[J].Japanese journal of applied physics,20098 Pt.1(8 Pt.1):080001:1-080001:14.
[4]	Burr G W;Breitwisch M J;Franceschini M.Phase change memory technology[J].Journal of Vacuum Science and Technology B:Microelectronics and Nanometer Structures,201028:223.
[5]	H.-S. PHILIP WONG;SIMONE RAOUX;SANGBUM KIM;JIALE LIANG;JOHN P. REIFENBERG;BIPIN RAJENDRAN;MEHDI ASHEGHI;KENNETH E. GOODSON.Phase Change Memory[J].Proceedings of the IEEE,201012(12):2201-2227.
[6]	A.L. Lacaita.Phase change memories: State-of-the-art, challenges and perspectives[J].Solid-State Electronics,20061(1):24-31.
[7]	Pihosh Y;Goto M;Kasahara A;Oishi T;Tosa M.Influence of reacting nitrogen gas consistence on the properties of TiN films prepared by rf. magnetron sputtering[J].Applied Surface Science: A Journal Devoted to the Properties of Interfaces in Relation to the Synthesis and Behaviour of Materials,20051/4(1/4):244-247.
[8]	Kang DH;Kim IH;Jeong JH;Cheong BK;Ahn DH;Lee D;Kim HM;Kim KB;Kim SH.An experimental investigation on the switching reliability of a phase change memory device with an oxidized TiN electrode[J].Journal of Applied Physics,20065(5):54506-1-54506-9-0.
[9]	Saha N C;Tompkins H G.Titanium nitride oxidation chemistry:an X-ray photoelectron spectroscopy study[J].Japanese Journal of Applied Physics,199272:3072.
[10]	Tompkins H G;Sellers J A.Oxidation of TiN in an oxygen plasma ashing[J].J Vac Sci Technol A:Vacuum,Surfaces and Films,199412:2446.
[11]	Tompkins H G.The initial stages of the oxidation of titanium nitride[J].Journal of Applied Physics,199271:980.
[12]	Tompkins H G.Oxidation of titanium nitride in room air and in dry O2[J].Journal of Applied Physics,199170:3876.
[13]	Graciani J;Sanz JF;Asaki T;Nakamura K;Rodriguez JA.Interaction of oxygen with TiN(001): N <-> O exchange and oxidation process[J].The Journal of Chemical Physics,200724(24):44713-1-44713-8-0.
[14]	Xu C;Song ZT;Liu B;Feng SL;Chen B.Lower current operation of phase change memory cell with a thin TiO2 layer[J].Applied physics letters,20086(6):62103-1-62103-3-0.

上一张下一张

计量

下载量()
访问量()

作者相关

在本站搜索
在百度学术搜索
在万方数据库搜索
在CNKI搜索

文章评分

您的评分：
1

0%
2

0%
3

0%
4

0%
5

0%

材料期刊网

The effect of oxygen plasma ashing on the resistance of TiN bottom electrode for phase change memory

参考文献