参考文献
| [1] | S. Pandija;D. Roy;S.V. Babu.Achievement Of High Planarization Efficiency In Cmp Of Copper At A Reduced Down Pressure[J].Microelectronic Engineering,20093(3):367-373. |
| [2] | Fayolle M;Passemard G;Assous M.Integration of copper with an organic low-k dielectric in 0.12-μm node interconnect[J].Microelectronic Engineering,200260:119. |
| [3] | S. Bukkapatnam;P. Rao;R. Komanduri.Experimental dynamics characterization and monitoring of MRR in oxide chemical mechanical planarization (CMP) process[J].International Journal of Machine Tools & Manufacture: Design, research and application,200812/13(12/13):1375-1386. |
| [4] | Peter A. Dearnley.Engineering titanium surfaces[J].Surface Engineering,20076(6):399-400. |
| [5] | Christphe Donnet;Ali Erdemir.New horizon in the tribology of diamondlike carbon films[J].Surface Engineering,20086(6):399-401. |
| [6] | T.C. Chang;T.M. Tsai;P.T. Liu;C.W. Chen;S.T. Yan;H. Aoki;Y.C. Chang;T.Y. Tseng.CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applications[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,20041(1):524-530. |
| [7] | Xiaoyan Liu;Yuling Liu;Yan Liang;Haixiao Liu;Yi Hu;Baohong Gao.Optimization of slurry components for a copper chemical mechanical polishing at low down pressure using response surface methodology[J].Microelectronic engineering,20111(1):99-104. |
| [8] | Y. G. Wang;L. C. Zhang;A. Biddut.Chemical effect on the material removal rate in the CMP of silicon wafers[J].Wear: an International Journal on the Science and Technology of Friction, Lubrication and Wear,20113/4(3/4):312-316. |
| [9] | Sumeet Bhagavat;Juan Carlos Liberato;Chunhui Chung;Imin Kao.Effects of mixed abrasive grits in slurries on free abrasive machining (FAM) processes[J].International Journal of Machine Tools & Manufacture: Design, research and application,20109(9):843-847. |
| [10] | Hu Yi;Liu Yuling;Liu Xiaoyan.Effects of alkaline slurry on the electric character of the pattern Cu wafer[J].Journal of Semiconductors,201132(07):076002. |
| [11] | Sang-Jun HAN;Yong-Jin SEO.Voltage-induced material removal mechanism of copper for electrochemical-mechanical polishing applications[J].中国有色金属学报（英文版）,2009(z1):262-265. |
| [12] | J. Tiley;K. Shiveley;G. B. Viswanathan;C. A. Crouse;A. Shiveley.Novel automatic electrochemical-mechanical polishing (ECMP) of metals for scanning electron microscopy[J].Micron: The international research and review journal for microscopy,20106(6):615-621. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%