参考文献
[1] | Shinohara, K.;Regan, D.C.;Tang, Y.;Corrion, A.L..Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications[J].IEEE Transactions on Electron Devices,201310(10):2982-2996. |
[2] | AlGaN/GaN HEMTs on diamond substrate with over 7W/mm output power density at 10 GHz[J].Electronics Letters,201320(20):1298-1299. |
[3] | Dambrine G.;Cappy A..A new method for determining the FET small-signal equivalent circuit[J].IEEE Transactions on Microwave Theory and Techniques,19887(7):1151-1159. |
[4] | Costa D.;Liu W.U..Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit[J].IEEE Transactions on Electron Devices,19919(9):2018-2024. |
[5] | Shealy J. R.;Wang J.;Brown R..Methodology for Small-Signal Model Extraction of AlGaN HEMTs[J].IEEE Transactions on Electron Devices,20087(7):1603-1613. |
[6] | Guang Chen;Vipan Kumar;Randal S. Schwindt;Ilesanmi Adesida.A Low Gate Bias Model Extraction Technique for AlGaN/GaN HEMTs[J].IEEE Transactions on Microwave Theory and Techniques,20067(7):2949-2953. |
[7] | Giovanni Crupi;Dongping Xiao;Dominique M. M.-P. Schreurs;Ernesto Limiti;Alina Caddemi;Walter De Raedt;Marianne Germain.Accurate Multibias Equivalent-Circuit Extraction for GaN HEMTs[J].IEEE Transactions on Microwave Theory and Techniques,200610(10):3616-3622. |
[8] | Anwar Jarndal;Gunter Kompa.A New Small-Signal Modeling Approach Applied to GaN Devices[J].IEEE Transactions on Microwave Theory and Techniques,200511(11):3440-3448. |
[9] | Jarndal A.;Kompa G..An accurate small-signal model for AlGaN-GaNHEMT suitable for scalable large-signal model construction[J].IEEE microwave and wireless components letters: A publication of the IEEE Microwave Theory and Techniques Society,20066(6):333-335. |
[10] | Landa A Z;Zu(n)iga J E;Reynoso-Hernández J A.A new and better method for extracting the parasitic elements of on-wafer GaN transistors[A].,2007:791. |
[11] | Reynoso-Hemández J A;Zufiga-Juirez J E;Landa A Z.A new method for determining the gate resistance and inductance of GaN HEMTs based on the extrema points of Z11 curves[A].,2008:1409. |
[12] | Alt, A.R.;Marti, D.;Bolognesi, C.R..Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies[J].IEEE microwave magazine,20134(4):83-101. |
[13] | Hanna V F;Thebault D.Theoretical and experimental investigation of asymmetric coplanar waveguides[J].IEEE Transactions on Microwave Theory and Techniques,198420(03):469. |
[14] | Jarndal A;Markos A Z;Kompa G.Improved parameter extraction method for GaN HEMT on Si substrate[A].,2010:1668. |
[15] | Brady R. G.;Oxley C. H.;Brazil T. J..An Improved Small-Signal Parameter-Extraction Algorithm for GaN HEMT Devices[J].IEEE Transactions on Microwave Theory and Techniques,20087(7):1535-1544. |
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