半导体学报（英文版）, 2015, 36(12): 124-127. doi: 10.1088/1674-4926/36/12/125003

A 1.8-3 GHz-band high efficiency GaAs pHEMT power amplifier MMIC

Keywords： wideband

参考文献

[1]	Ahmed Chaouki Megherbi;Said Benramache;Abderrazak Guettaf.Backgating effect in GaAs FETs with a channel-semi-insulating substrate boundary[J].半导体学报（英文版）,2014(03):33-38.
[2]	Iwai T.;Nakasha Y.;Miyashita T.;Ohara S.;Joshin K.;Kobayashi K..42% high-efficiency two-stage HBT power-amplifier MMIC for W-CDMA cellular phone systems[J].IEEE Transactions on Microwave Theory and Techniques,200012(12):2567-2572.
[3]	M. Hirata;T. Oka;M. Hasegawa;Y. Amano;Y. Ishimaru;H. Kawamura;K. Sakuno.Fully-integrated GaAs HBT power amplifier MMIC with high linear output power for 3 GHz-band broadband wireless applications[J].Electronics Letters,200622(22):1286-1287.
[4]	Mori K.;Kitabayashi F.;Ohta A.;Ikeda Y.;Ishida O.;Shinjo S..An L-band high-efficiency and low-distortion power amplifier using HPF/LPF combined interstage matching circuit[J].IEEE Transactions on Microwave Theory and Techniques,200012(12):2560-2566.
[5]	Ohtomo M..Stability analysis and numerical simulation of multidevice amplifiers[J].IEEE Transactions on Microwave Theory and Techniques,19936(6):983-991.

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