欢迎登录材料期刊网

材料期刊网

高级检索

参考文献

[1] Gerardin S.;Bagatin M.;Cester A.;Paccagnella A.;Kaczer B..Impact of Heavy-Ion Strikes on Minimum-Size MOSFETs With Ultra-Thin Gate Oxide[J].IEEE Transactions on Nuclear Science,20066(6):3675-3680.
[2] Marinoni M.;Touboul A. D.;Zander D.;Petit C.;Wrobel F.;Carvalho A. M. J. F.;Arinero R.;Ramonda M.;Saigne F.;Weulersse C.;Buard N.;Carriere T.;Lorfevre E..High-Energy Heavy Ion Irradiation-Induced Structural Modifications: A Potential Physical Understanding of Latent Defects[J].IEEE Transactions on Nuclear Science,20085 Pt.2(5 Pt.2):2970-2974.
[3] Sexton F.W.;Fleetwood D.M..Precursor ion damage and angular dependence of single event gate rupture in thin oxides[J].IEEE Transactions on Nuclear Science,19986(6):2509-2518.
[4] Larcher L.;Paccagnella A..A model of radiation induced leakage current (RILC) in ultra-thin gate oxides[J].IEEE Transactions on Nuclear Science,19996(6):1553-1561.
[5] E. Simoen;J.M. Rafi;A. Mercha;C. Claeys.Total ionizing dose damage in deep submicron partially depleted SOI MOSFETs induced by proton irradiation[J].Solid-State Electronics,2004issue 6(issue 6):1045-1054.
[6] K. Hayama;K. Takakura;M. Yoneoka;H. Ohyama;J. M. Rafi;A. Mercha;E. Simoen;C. Claeys.Dose rate dependence of the back gate degradation in thin gate oxide PD-SOI MOSFETs by 2-MeV electron irradiation[J].Microelectronic engineering,20079/10(9/10):2125-2128.
[7] Srour, J.R.;Palko, J.W..Displacement Damage Effects in Irradiated Semiconductor Devices[J].IEEE Transactions on Nuclear Science,20133 Part2(3 Part2):1740-1766.
[8] Shinobu Onoda;Toshio Hirao;Jamie Stuart Laird;Hidenobu Mori;Hisayoshi Itoh;Takeshi Wakasa;Tsuyoshi Okamoto;Yoshiharu Koizumi.Displacement damage degradation of ion-induced charge in Si pin photodiode[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,20030(0):444-447.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%