We have investigated the electronic properties of WTe2 armchair nanoribbons with defects.WTe2 nanoribbons can be categorized depending on the edge structure in two types:armchair and zigzag.WTe2 in its bulk form has an indirect band gap but nanoribbons and nanosheets of WTe2 have direct band gaps.Interestingly,the zigzag nanoribbon is metallic while the armchair nanoribbons are semiconducting.Thus they can find applications in device fabrication.Therefore,it is very important to study the effect of defects on the electronic properties of the armchair nanoribbons as these defects can impair the device properties and characteristics.We have considered defects such as:vacancy,rough edge,wrap,ripple and twist in this work.We report the band gap variation with these defects.We have also studied the change in band gap and total energy with varying degrees of wrap,ripple and twist.
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