参考文献
| [1] | Hu J C;Yang H;Kraft R.Feasibility of using W/TiN as metal gate for conventional 0.13 μm CMOS technology and beyond[A].,1997:825. |
| [2] | Hobbs C;Fonseca L;Dhandapani V.Fermi level pinning at the polySi/metal oxide interface[A].,2003:9. |
| [3] | Chang L;Tang S;King T.Gate length scaling and threshold voltage control of double-gate MOSFETs[A].,2000:719. |
| [4] | Choi K;Wen H C;Alshareef H.The effect of metal thickness,overlayer and high-k surface treatment on the effective work function of metal electrode[A].Grenoble,France,2005:101. |
| [5] | Kesapragada S;Wang R;Liu D.High-k/metal gate stacks in gate first and replacement gate schemes[A].,2010:256. |
| [6] | Heo S C;Choi C.Plasma atomic layer deposited TiN metal gate for three dimensional device applications:deposition temperature,capping metal and post annealing[J].Microelectronic Engineering,201294:11. |
| [7] | Lee S H;Choi R;Choi C.Effects of composition and thickness of TiN metal gate on the equivalent oxide thickness and flatband voltage in metal oxide semiconductor devices[J].Microelectronic Engineering,2013109:160. |
| [8] | [OL].http://www-device.eecs.berkeley.edu/qmcv/ |
| [9] | Xiong K;Robertson J;Pourtois G.Impact of incorporated A1 on the TiN/HfO2 interface effective work function[J].Journal of Applied Physics,2008104:074501. |
| [10] | Arimura H;Haight R;Brown S L.Temperature-dependent La-and Al-induced dipole behavior monitored by femtosecond pump/probe photoelectron spectroscopy[J].Applied Physics Letters,201096:132902. |
| [11] | Yang Z C;Huang A P;Yan L.Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation[J].Applied Physics Letters,200994:252905. |
| [12] | Haruhiko T;Hiroshi M;Yusuke M.Ti-capping technique as a breakthrough for achieving low threshold voltage,high mobility,and high reliability ofpMOSFET with metal gate and high-k dielectrics technologies[A].,2009:427. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%