参考文献
| [1] | Wu Yu,Lu Xiuhong,Kang Baowei,et al.A novel low power loss IGBT (LPL-IGBT) and its simulation.Chinese Journal of Semiconductors,2001,22(12):1565 |
| [2] | Baliga J.The future of power semiconductor device technology.Proc IEEE,2001,89(6):822 |
| [3] | Laska T,Pfirsch F,Hirler F,et al.1200 V-trench-IGBT study with square short circuit SOA.Proc ISPSD,1998:433 |
| [4] | Omura I,Oguar T,Sugiyama K,et al.Carrier injection enhancement effect of high voltage MOS devices——evice physics and design concept.Proc ISPSD,1997:217 |
| [5] | Ogura T,Ninomuya H,Sugiyama K,et al.4.5-kV injectionenhanced gate transistors (IEGTs) with high turn-offruggedness.IEEE Trans Electron Devices,2004,51(4):636 |
| [6] | Kitagawa M,Omura I,Hasegawa S,et al.A 4500 V injection enhanced insulated gate bipolar transistor (IEGT) operating in a mode similar to a thyristor.Electron Devices Meeting,1993 |
| [7] | Baliga J.Modem power devices.New York:J Wiley & Sons,1987 |
| [8] | Baliga B J.Fundamentals of power semiconductor devices.Springer,2008 |
| [9] | Laska T,Miinzer M,Pfirsch F,et al.The field stop IGBT (FS IGBT)-a new power device concept with a great improvement potential.Proc ISPSD,2000:355 |
| [10] | Lu Jiang,Wang Lixin,Lu Shuojin,et al.Avalanche behavior of power MOSFETs under different temperature conditions.Journal of Semiconductors,2011,32(1):014001 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%