参考文献
| [1] | Vogelsang T,Hofmann K R.Electron mobilities and high-field drift velocities in strained silicon on silicon-germanium substrate.Proc 50th Annu Device Res ConfDig,1992:34 |
| [2] | Kumar M J,Venkataraman V,Nawal S.A simple analytical threshold voltage model of nanoscale single-layer fully depleted strained-silicon-on-insulator MOSFETs.IEEE Trans Electron Devices,2006,53(10):2500 |
| [3] | Rim K,Anderson R,Boyd D,et al.Strained Si CMOS (SS CMOS) technology:opportunities and challenges.Solid-State Electron,2003,47:1133 |
| [4] | Rim K,Hoyt J L,Gibbons J F.Fabrication and analysis of deep submicron strained-Si n-MOSFET's.IEEE Trans Electron Devices,2000,47:1406 |
| [5] | Saad I,Riyadi M A,Taghi M,et al.Analytical analysis of ballistic drift velocity in low-dimensional nano-devices.Fourth Asia International Conference on Mathematica/Analytical Modeling and Computer Simulation,Kota Kinabalu,Malaysia,2010:601 |
| [6] | Ahmadi M T,Lau H H,Ismail R,et al.Current-voltage characteristic of a silicon nanowire transistor.Microelectron J,2009,40:547 |
| [7] | Arora V K.High-field distribution and mobility in semiconductors.Jpn J Appl Phys,1985,24:537 |
| [8] | Lime F,Andrieu F,Derx J,et al.Low temperature characterization of effective mobility in uniaxially and biaxially strained nMOSFETs.Solid-State Electron,2006,50(4):644 |
| [9] | Tinoco J C,Garcia R,Iniguez B,et al.Threshold voltage model for bulk strained-silicon NMOSFETs.Semicond Sci Technol,2008,23(3):035017 |
| [10] | Nayfeh H M,Hoyt J L,Antoniadis D A.A physically based analytical model for the threshold voltage of strained-Si nMOSFETs.IEEE Trans Electron Devices,2004,51(12):2069 |
| [11] | Briggs P J,Walker A B,Herbert D C.Modelling the influence of high currents on the cutoff frequency in Si/SiGe/Si heterojunction transistors.Semicond Sci Technol,1998,13:468 |
| [12] | Riyadi M A,Ahmadi M T,Susendo J E,et al.Physics-based simulation of carrier velocity in 2-dimensional P-type MOSFET.Third Asia International Conference on Modeling & Simulation,2009:735 |
| [13] | Arora V K.Quantum engineering ofnanoelectronic devices.Microelectron J,2000,31(11/12):853 |
| [14] | Ahmadi M T,Ismail R,Tan M L P,et al.The ultimate ballistic drift velocity in carbon nanotubes.J Nanomater,2008,2008:769250 |
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