半导体学报（英文版）, 2013, 34(5): 35-37. doi: 10.1088/1674-4926/34/5/053006

Preparation of GaN-on-Si based thin-film flip-chip LEDs

Keywords： silicon substrate

参考文献

[1]	http://www.cree.com/news-and-events/cree-news/press-releases/2012/july/170-1pw
[2]	Chu C F,Yu C C,Cheng H C,et al.Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser liftoff.Jpn J Appl Phys,2003,42:L147
[3]	Fujii T,Gao Y,Sharma R,et al.Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening.Appl Phys Lett,2004,84:855
[4]	Tu S H,Chen J C,Hwu F S,et al.Characteristics of current distribution by designed electrode patterns for high power thin GaN LED.Solid-State Electron,2010,54:1438
[5]	Shchekin O B,Epler J E,Trottier T A,et al.High performance thin-film flip-chip InGaN-GaN light-emitting diode.Appl Phys Lett,2006,89:071109
[6]	Minsky M S,White M,Hu E L.Room-temperature photoenhanced wet etching of GaN.Appl Phys Lett,1996,68:1531

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