参考文献
[1] | Gallagher R C,Corak W S.A metal-oxide-semiconductor (MOS) Hall element.Solid-State Electron,1966,9:571 |
[2] | Liu T,Zhu D Z.Relative sensitivity of sector split-drain magnetic field-effect transistor based on geometrical correction factor of sector Hall plate.Chinese Journal of Semiconductors,2006,27:2155 |
[3] | Yao Y R,Zhu D Z.Sector split-drain magnetic MAGFET structure and model based on standard CMOS technology.Chinese Journal of Semiconductors,2005,26:2005 |
[4] | Bihan F L,Carvou E,Fortin B,et al.Realization of polycrystalline silicon magnetic sensors.Sensors and Actuators A,2001,88:133 |
[5] | Carvou E,Bihan F L,Rogel R,et al.Magnetic sensors with polysilicon TFTs.Sensor Proceedings of IEEE,2002,2:804 |
[6] | Carvou E,Bihan F L,Bonnaud O.Hall effect magnetic sensors based on polysilicon TFTs.IEEE Sensors Journal,2004,4:597 |
[7] | Jacques E,Bihan F L,Crand S,et al.Differential amplifier using polysilicon TFTs processed at low temperature to be integrated with TFT Hall sensor.Conference on IEEE Industrial Electronics,2006:3193 |
[8] | Yamaguchi Y,Hashimoto H,Kimura M,et al.Magnetic-field area sensor using poly-Si micro Hall devices.IEEE Electron Device Lett,2010,31:1260 |
[9] | Kimura M,Yamaguchi Y,Hashimoto H,et al.Analysis of Hall voltage in micro poly-Si Hall cells.Electrochemical and SolidState Lett,2010,13:J96 |
[10] | Chen X Y,Shen W Z,He Y L.Enhancement of electron mobility in nanocrystalline silicon/crystalline silicon heterostructures.J Appl Phys,2005,97:024305 |
[11] | Chen X Y,Shen W Z,Chen H,et al.High electron mobility in well ordered and lattice-strained hydrogenated naocrystalline silicon.Nanotechnology,2006,17:595 |
[12] | Chuai R Y,Wang J,Wu M L,et al.A tunneling piezoresistive model for polysilicon.Journal of Semiconductors,2012,33:092003 |
[13] | Zhao X F,Wen D Z.Fabrication and characteristics of a nanopolysilicon thin film pressure sensor.Journal of Semiconductors,2008,29:2038 |
[14] | Zhao X F,Wen D Z.Fabrication and characteristics ofthe nc-Si/cSi heterojunction MAGFET.Journal of Semiconductors,2009,30:114002 |
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