参考文献
| [1] | Merchant S,Arnold E,Baumgart S,et al.Realization of high breakdown voltage (＞ 700 V) in thin SOI device.ISPSD,1991:31 |
| [2] | Li Q,Zhang B,Li Z.A new partial SOI high voltage device with double-faced step buried oxide structure.Acta Physica Sinica,2008,57(10):6565 |
| [3] | Ramakrishna T,Shyam H,Sankara E M.Realizing high breakdown voltage (＞ 600 V) in partial SOI technology.Solid-State Electron,2004,48:1655 |
| [4] | Luo X R,Li Z J,Zhang B,et al.A novel structure and its breakdown mechanism of a SO1 high voltage device with a shield trench.Chinese Journal of Semiconductors,2005,26(11):2154 |
| [5] | Zhang B,Li Z,Hu S,et al.Field enhancement for dielectric layer of high-voltage devices on silicon on insulator.IEEE Trans Electron Devices,2009,56(10):2327 |
| [6] | Wang W L,Zhang B,Chen W J,et al.High voltage SOl SJLDMOS with dynamic back-gate voltage.Electron Lett,2009,45(4):233 |
| [7] | Luo X,Zhang B,Li Z,et al.A novel 700-V SOI LDMOS with double-sided trench.IEEE Electron Device Lett,2007,28(5):422 |
| [8] | Ge R,Luo X,Jiang Y H,et al.A low on-resistance SOI LDMOS using a trench gate and a recessed drain.Journal of Semiconductors,2012,33(7):074005 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%