参考文献
| [1] | Binet L,Gourier D.Origin ofthe blue luminescence ofβ-Ga2O3.J Phys Chem Solids,1998,59(8):1241 |
| [2] | Orita M,Hiramatsu H,Ohta H,et al.Preparation of highly conductive,deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures.Thin Solid Films,2002,411(1):134 |
| [3] | Orita M,Ohta H,Hirano M,et al.Deep-ultraviolet transparent conductive β-Ga2O3 thin films.Appl Phys Lett,2000,77(25):4166 |
| [4] | Ueda N,Hosono H,Waseda R,et al.Synthesis and control of conductivity of ultraviolet transmitting β-Ga2O3 single crystals.Appl Phys Lett,1997,70(26):3561 |
| [5] | Ogita M,Higo K,Nakanishi Y,et al.Ga2O3 thin film for oxygen sensor at high temperature.Appl Phys Lett,2001,175/176:721 |
| [6] | Benramache S,Chabane F,Benhaoua B,et al.Influence of growth time on crystalline structure,conductivity and optical properties of ZnO thin films.Journal of Semiconductors,2013,34(2):023001 |
| [7] | Courts T J,Young D L,Li Xiaonan.Characterization of transparent conducting oxide.MRS Bulletin,2000,25(8):58 |
| [8] | Yue Wei,Yan Jinliang,Wu Jiangyan,et al.Structural and optical properties of Zn-doped β-Ga2O3 films.Journal of Semiconductors,2012,33(7):073003 |
| [9] | Minami T.New n-type transparent conducting oxides.MRS Bulletin,2000,25(8):38 |
| [10] | Yang F,Ma J,Luan C,et al.Structural and optical properties of Ga2(1-x)In2xO3films prepared on α-Al2O3 (0001) by MOCVD.Appl Surf Sci,2009,255(8):4401 |
| [11] | Liu Jianjun,Yan Jinliang,Shi Liang,et al.Electrical and optical properties of deep ultraviolet transparent conductive Ga2O3/ITO films by magnetron sputtering.Journal of Semiconductors,2010,31(10):103001 |
| [12] | Li Ting,Yan Jinliang,Ding Xingwei,et al.Effect of substrate temperature on the properties of deep ultraviolet transparent conductive ITO/Ga2O3 films.Journal of Semiconductors,2012,33(1):013002 |
| [13] | Hao L,Diao X,Xu H,et al.Thickness dependence of structural,electrical and optical properties of indium tin oxide (ITO) films deposited on PET substrates.Appl Surf Sci,2008,254(11):3504 |
| [14] | Cullity B D,Stock S R.Elements of X-ray diffraction.3rd ed.New Jersey:Prentice Hall,2001 |
| [15] | Guillen C,Herrero J.Polycrystalline growth and recrystallization processes in sputtered ITO thin films.Thin Solid Films,2006,510(1/2):260 |
| [16] | Szczyrbowski J,Hartig K,Roegels S,et al.Coating,composed of an optically effective layer system,for substrates,whereby the layer system has a high anti-reflective effect,and method for the manufacturing of the coating.US Patent,No.5216542,1993 |
| [17] | Ray S,Banerjee R,Basu N,et al.Properties of tin doped indium oxide thin films prepared by magnetron sputtering.J Appl Phys,1983,54(6):3497 |
| [18] | Tauc J.Amorphous and liquid semiconductors.London:Plenum Press,1974 |
| [19] | Curie D,Bartolo B D.Luminescence of inorganic solids.New York:Plenum Press,1978 |
| [20] | Higuchi M,Uekusa S,Nakano R,et al.Postdeposition annealing influence on sputtered indium tin oxide film characteristics.Jpn J Appl Phys,1994,33:302 |
| [21] | Seto J Y W.The electrical properties of polycrystalline silicon films.J Appl Phys,1975,46(12):5247 |
| [22] | Kulkarni A K,Schulz K H,Lim T S,et al.Dependence of the sheet resistance of indium-tin-oxide thin films on grain size and grain orientation determined from X-ray diffraction techniques.Thin Solid Films,1999,345(2):273 |
| [23] | Zhang Qun,Li Xifeng,Li Guifeng.Dependence of electrical and optical properties on thickness of tungsten-doped indium oxide thin films.Thin Solid Films,2008,517(2):613 |
| [24] | Kim H,Horwitz J S,Kushto G,et al.Effect of film thickness on the properties of indium tin oxide thin films.J Appl Phys,2000,88(10):6021 |
| [25] | Gao Meizhen,Job R,Xue Desheng,et al.Thickness dependence of resistivity and optical reflectance of ITO films.Chin Phys Lett,2008,25(4):1380 |
| [26] | Haacke G.New figure of merit for transparent conductors.J Appl Phys,1976,47(9):4086 |
| [27] | Kim D.Influence of the Cs partial pressure on the optical and electrical properties of ITO films prepared by dc sputter type negative metal ion beam deposition.Opt Mater,2003,24(3):471 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%