半导体学报（英文版）, 2013, 34(1): 45-48. doi: 10.1088/1674-4926/34/1/014005

基金项目: the National Major Science and Technology Special Project of China (.2011ZX02504-002,2011ZX02603-002)

SPT+-IGBT characteristics and optimization

Keywords： IGBT

参考文献

[1]	Wu Y,Lu X H,Kang B W,et al.A novel low power loss IGBT(LPL-IGBT) and its simulation.Chinese Journal of Semiconductors,2001,22(12):1565 (in Chinese)
[2]	Laska T,Miinzer M,Pfirsch F,et al.The field stop IGBT (FS IGBT)—a new power device concept with a great improvement potential.Proc ISPSD,2000:355
[3]	Rahimo M,Lukasch W,von Arx C,et al.Novel soft-punch-through (SPT) 1700 V IGBT sets benchmark on technology curve.Proc PCIM,Nuremberg,Germany,2001
[4]	Vobeck J,Rahimo M,Kopta A,et al.Exploring the silicon design limits of thin wafer IGBT technology:the controlled punch through (CPT) IGBT.Proc ISPSD,2008:76
[5]	Dewar S,Linder S,von Arx C,et aI.Soft punch through (SPT)-setting new standards in 1200V IGBT.Proc PCIM,Nuremberg,Germany,2000
[6]	Rahimo M,Kopta A,Schnell R,et al.2.5 kV-6.5 kV industry standard IGBT modules setting a new benchmark in SOA capability.Proc PCIM,Nurnberg,Germany,2004

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