In order to connect several independent LEDs in series,inductively coupled plasma (ICP) deep etching of GaN is required for isolation.The GaN-based high-voltage (HV) LEDs with a 5 μm deep isolation groove and an acceptable mesa sidewall angle of 79.2° are fabricated and presented.The surface morphology and construction profile of the etched groove are characterized by laser microscopy and scanning electron microscopy.After contact metal formation and annealing,the electrical properties are evaluated by Ⅰ-Ⅴ characteristics.The trend of the Ⅰ-Ⅴ curve has good accordance with conventional LEDs.The contact resistance of HV LEDs is also tested and was reduced by 4.6 Ω compared to conventional LEDs,while the output power increased by 5 W.The results show that this technique can be applied to practical fabrication.
参考文献
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