Recently there has been a rapid domestic development in group Ⅲ nitride semiconductor electronic materials and devices.This paper reviews the important progress in GaN-based wide bandgap microelectronic materials and devices in the Key Program of the National Natural Science Foundation of China,which focuses on the research of the fundamental physical mechanisms of group Ⅲ nitride semiconductor electronic materials and devices with the aim to enhance the crystal quality and electric performance of GaN-based electronic materials,develop new GaN heterostructures,and eventually achieve high performance GaN microwave power devices.Some remarkable progresses achieved in the program will be introduced,including those in GaN high electron mobility transistors (HEMTs) and metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) with novel high-k gate insulators,and material growth,defect analysis and material properties of InAlN/GaN heterostructures and HEMT fabrication,and quantum transport and spintronic properties ofGaN-based heterostructures,and highelectric-field electron transport properties of GaN material and GaN Gunn devices used in terahertz sources.
参考文献
| [1] | Okamoto Y,Ando Y,Hataya K,et al.Improved power performance for a recessed-gate AIGaN-GaN heterojunction FET with a field-modulating plate.IEEE Trans Microw Theory Tech,2004,52(11):2536 |
| [2] | Wu Y F,Moore M,Saxler A,et al.40-W/mm double field-plated GaN HEMTs.64th Device Research Conference,2006:151 |
| [3] | Shinohara K,Regan D,Corrion A,et al.Deeply-scaled selfaligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency.IEEE International Electron Devices Meeting,2011:19.1.1 |
| [4] | Brown D F,Williams A,Shinohara K,et al.W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE.IEEE International Electron Devices Meeting,2011:19.3.1 |
| [5] | Lee D S,Lu B,Azize M,et al.Impact of GaN channel scaling in InAlN/GaN HEMTs.IEEE International Electron Devices Meeting,2011:19.2.1 |
| [6] | Xu F J,Xu J,Shen B,et al.Realization of high-resistance GaN by controlling the annealing pressure of the nucleation layer in metal-organic chemical vapor deposition.Thin Solid Films,2008,517:588 |
| [7] | Liu Ziyang,Zhang Jincheng,Duan Huantao,et al.Effects of the strain relaxation of an AlGaN barrier layer induced by various cap layers on the transport properties in AlGaN/GaN heterostructures.Chinese Physics B,2011,20(9):097701 |
| [8] | Yue Yuanzheng,Hao Yue,Zhang Jincheng,et al.GaN MOSHEMT with HfO2 dielectric and Al2O3 interfacial passivation layer grown by atomic layer deposition.IEEE Electron Device Lett,2008,29(8):838 |
| [9] | Yue Yuanzheng,Hao Yue,Zhang Jincheng,et al.A study on Al2O3 passivation in GaN MOSHEMT by pulsed stress.Chinese Physics B,2008,17(4):1405 |
| [10] | Bi Zhiwei,Feng Qian,Hao Yue,et al.AlGaN/GaN MIS-HEMT using NbAlO dielectric layer grown by atomic layer deposition.Chinese Physics B,2010,19(7):077303 |
| [11] | Hao Yue,Yang Ling,Ma Xiaohua,et al.High-performance microwave gate-recessed AlGaN/AlN/GaN MOSHEMT with 73％power-added efficiency.IEEE Electron Device Lett,2011,32(5):626 |
| [12] | Katz O,Mistele D,Meyler B,et al.InAlN/GaN heterostructure field-effect transistor DC and small-signal characteristics.Electron Lett,2004,40:1304 |
| [13] | Kuzmik J,Pozzovivo G,Ostermaier C,et al.Analysis of degradation mechanisms in lattice-matched InAlN/GaN high-electronmobility transistors.J Appl Phys,2009,106:124503 |
| [14] | Xue Junshuai,Hao Yue,Zhou Xiaowei,et al.High quality InAlN/GaN heterostructures grown on sapphire by pulsed metal organic chemical vapor deposition.J Cryst Growth,2011,314(1):359 |
| [15] | Zhang Jinfeng,Wang Pingya,Xue Junshuai,et al.High electron mobility lattice-matched InAlN/GaN materials.Acta Physica Sinica,2011,60(11):611 |
| [16] | Xue Junshuai,Zhang Jincheng,Hou Yaowei,et al.Pulsed metal organic chemical vapor deposition of nearly latticed-matched InAlN/GaN/InAlN/GaN double-channel high electron mobility transistors.Appl Phys Lett,2012,98:113504 |
| [17] | Miao Z L,Tang N,Xu F J,et al.Magnetotransport properties of lattice-matched In0.18Al0.82 N/AlN/GaN heterostructures.J Appl Phys,2011,109:016102 |
| [18] | Song J,Xu F J,Yan X D,et al.High conductive gate leakage current channels induced by In segregation around screw-and mixed-type threading dislocations in lattice-matched InxAl1-xN/GaN heterostructures.Appl Phys Lett,2010,97:232106 |
| [19] | Xue Junshuai,Hao Yue,Zhang Jincheng,et al.Nearly latticematched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition.Appl Phys Lett,2011,98:113504 |
| [20] | He X W,Shen B,Chen Y H,et al.Anomalous photogalvanic effect of circularly polarized light incident on the two-dimensional electron gas in AlxGa1-x N/GaN heterostructures at room temperature.Phys Rev Lett,2008,101:147402 |
| [21] | Yin Chunming,Shen Bo,Zhang Qi,et al.Rashba and Dresselhaus spin-orbit coupling in GaN-based heterostructures probed by the circular photogalvanic effect under uniaxial strain.Appl Phys Lett,2010,97:181904 |
| [22] | Tang N,Shen B,Han K,et al.Zero-field spin splitting in AlxGa1-xN/GaN heterostructures with various A1 compositions.Appl Phys Lett,2008,93:172113 |
| [23] | Ma N,Shen B,Lu L W,et al.Boundary-enhanced momentum relaxation of longitudinal optical phonons in GaN.Appl Phys Lett,2012,100:052109 |
| [24] | Ma N,Shen B,Xu F J,et al.Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers.Appl Phys Lett,2010,96:242104 |
| [25] | Yang Lin'an,Hao Yue,Zhang Jincheng,et al.Use of AlGaN in the notch region ofGaN Gurm diodes.Appl Phys Lett,2009,95:143507 |
| [26] | Yang Lin'an,Hao Yue,Yao Qingyang,et al.Improved negative differential mobility model of GaN and AlGaN for a terahertz Gunn diode.IEEE Trans Electron Devices,2011,58(4):1076 |
| [27] | Yang Lin'an,Mao Wei,Yao Qingyang,et al.Temperature effect on the submicron AlGaN/GaN Gunn diodes for terahertz frequency.J Appl Phys,2011,109:024503 |
| [28] | Li Liang,Yang Lin'an,Zhang Jincheng,et al.Threading dislocation reduction in transit region of GaN terahertz Gunn diodes.Appl Phys Lett,2012,100:072104 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%