A technique to improve and accelerate aluminum induced crystallization (AIC) by using hydrogen plasma is proposed.Raman spectroscopy and secondary ion mass spectrometry of crystallized poly-Si thin films show that hydrogen plasma radicals reduce the crystallization time of AIC.This technique shortens the annealing time from 10 to 4 h and increases the Hall mobility from 22.1 to 42.5 cm2/(V·s).The possible mechanism of AIC assisted by hydrogen radicals is also discussed.
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