A CMOS RF front-end for the long-term evolution (LTE) direct conversion receiver is presented.With a low noise transconductance amplifier (LNA),current commutating passive mixer and transimpedance operational amplifier (TIA),the RF front-end structure enables high-integration,high linearity and simple frequency planning for LTE multi-band applications.Large variable gain is achieved using current-steering transconductance stages.A current commutating passive mixer with 25％ duty-cycle LO improves gain,noise and linearity.A direct coupled current-input filter (DCF) is employed to suppress the out-of-band interferer.Fabricated in a 0.13-μm CMOS process,the RF front-end achieves a 45 dB conversion voltage gain,2.7 dB NF,-7 dBm IIP3,and +60 dBm ⅡP2 with calibration from 2.3 to 2.7 GHz.The total RF front end with divider draws 40 mA from a single 1.2-V supply.
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