HfO2 films were deposited by atomic layer deposition through alternating pulsing of Hf[N(C2H5)(CH3)]4 and H2O2.A trace amount of nitrogen was incorporated into the HfO2 through ammonia annealing.The composition,the interface stability of the HfO2/Si stack and the optical properties of the annealed films were analyzed to investigate the property evolution of HfO2 during thermal treatment.With a nitrogen concentration increase from 1.41 to 7.45％,the bandgap of the films decreased from 5.82 to 4.94 eV.
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