Highly controllable ICP etching of GaAs based materials with SiCl4/Ar plasma is investigated.A slow etching rate of 13 nm/min was achieved with RF1 =10 W,RF2 =20 W and a high ratio of Ar to SiCl4 flow.First order gratings with 25 nm depth and 140 nm period were fabricated with the optimal parameters.AFM analysis indicated that the RMS roughness over a 10 × 10 μm2 area was 0.3 nm,which is smooth enough to regrow high quality materials for devices.
参考文献
| [1] | Granier H,Tasselli J,Marty A,et al.A SiC4 reactive ion etching and laser reflectometry process for AlGaAs/GaAs HBT fabrication.Vacuum,1996,47(11):1347 |
| [2] | Frei M R,Chiu T Y,Abernathy C R,et al.Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ionimplant isolation.Solid-State Electron,2001,45(9):1301 |
| [3] | Goddard L,Kallman J,Bond T,et al.Rapidly reconfigurable all-optical universal logic gates (invited).Proc SPIE,2006,6368(H):1 |
| [4] | Jalabert L,Dubreui]P,Carcenac F,et al.High aspect ratio GaAs nanowires made by ICP-RIE etching using Cl2/N2 chemistry.Microelectron Eng,2008,85(5/6):1173 |
| [5] | Li X,Cao X,Zhou H,et al.A low damage RIE process for the fabrication of compound semiconductor based transistors with sub-100 nm tungsten gates.Microelectron Eng,2006,83(4-9):1159 |
| [6] | Golka S,Austerer M,Pflügl C,et al.Processing of deeply etched GaAs/AlGaAs quantum cascade lasers with grating structures.Materials Research Society Symposium Proceedings,2005,829(1):245 |
| [7] | Jung M,Lee S,Jhon Y M,et al.Nanohole arrays with sub-30 nm diameter formed on GaAs using nanoporous alumina mask.Jpn J Appl Phys,2007,46(7A):4410 |
| [8] | Dultsev F,Nenasheva L.The effect of hydrogen as an additive in reactive ion etching of GaAs for obtaining polished surface.Appl Suff Sci,2006,253(3):1287 |
| [9] | Maher H,Etrillard J,Decobert J,et al.Dry etch recess of an InGaAs/InAlAs/InP HEMT like structure using a low energy high density SiCl4 plasma.Indium Phosphide and Related Materials Conference,1998,1(1):793 |
| [10] | Schartner S,Golka S,Pflügl C,et al.Deeply etched waveguide structures for quantum cascade lasers.Microelectron Eng,2006,83(4-9):1163 |
| [11] | Etrillard J,Ossarl P,Patriarche G,et al.Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4.Journal of Vacuum Science and Technology A,1997,15(3):626 |
| [12] | Lee H W,Kim M,Min N K,et al.Etching characteristics and mechanism of Inp in inductively coupled HBr/Ar plasma.Jpn J Appl Phys,2008,47(8):6917 |
| [13] | Yoon S F,Ng T K,Zheng H Q.Study of GaAs and GaInP etching in Cl2/Ar electron cyclotron resonance plasma.Thin Solid Films,2001,394(1/2):249 |
| [14] | Nam P S,Ferreira L M,Lee T Y,et al.Study of grass formation in GaAs backside via etching using inductively coupled plasma system J Vac Sci Technol B,2000,18(6):2780 |
| [15] | Chung C K.Geometrical pattern effect on silicon deep etching by an inductively coupled plasma system.J Micromechan Microeng,2004,14(4):656 |
| [16] | Akimoto T,Nanbu H,Ikawa E.Reactive ion etching lag on high rate oxide etching using high density plasma.J Vac Sci Technol B,1995,13(6):2390 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%