GaInP/GaAs/Ge tandem solar cells were fabricated by a MOCVD technique.The photoelectric properties of the solar cells were characterized by a current-voltage test method.The dependence of the solar cell's characteristics on temperature were investigated from 30 to 170 ℃ at intervals of 20 ℃.Test results indicated that with increasing temperature,Jsc of the cell increased slightly with a temperature coefficient of 9.8 (μA/cm2)/℃.Voc reduced sharply with a coefficient of-5.6 mV/℃.FF was reduced with a temperature coefficient of-0.00063/℃.Furthermore,the conversion efficiency decreased linearly with increasing temperature which decreased from 28％ at 30 ℃ to 22.1％ at 130 ℃.Also,detailed theoretical analyses for temperature characteristics of the solar cell were given.
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