The performance of a LOCOS-isolated SOI MOSFET heavily depends on its back-gate characteristic, which can be affected by back-gate stress,A large voltage stress was applied to the back gate of SOI devices for at least 30 s at room temperature,which could effectively modify the back-gate threshold voltage of these devices.This modification is stable and time invariant.In order to improve the back-gate threshold voltage,positive substrate bias was applied to NMOS devices and negative substrate bias was applied to PMOS devices,These results suggest that there is a leakage path between source and drain along the silicon island edge,and the application of large backgate bias with the source,drain and gate grounded can strongly affect this leakage path.So we draw the conclusion that the back-gate threshold voltage,which is directly related to the leakage current,can be influenced by back-gate stress.
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