参考文献
| [1] | Zantye P B,Kumar A,Sikdar A K.Chemical mechanical planarization for microelectronics applications.Mater Sci Eng R,2004,45:89 |
| [2] | Jinda A,Babu S V.Effect of pH on CMP of copper and tantalum.J Electrochem Soc,2004,151(10):709 |
| [3] | Chiu S Y,Wang Y L,Liu C P,et al.High-selectivity damascene chemical mechanical polishing.Thin Solid Films,2006,498:60 |
| [4] | Nguyen V H,Daamen R,Hoofman R.Impact of different slurry and polishing pad choices on the planarization efficiency of a copper CMP process.Microelectron Eng,2004,76:95 |
| [5] | Pandija S,Roy D,Babu S V.Achievement of high planarization efficiency in CMP of copper at a reduced down pressure.Microelectron Eng,2009,86:367 |
| [6] | Prasad Y N,Ramanthan S,Chemical mechanical planarization of copper in alkaline slurry with uric acid as inhibitor.Electrochimical Acta,2007,52:6353 |
| [7] | Cojocaru P,Muscolino F,Magagnin L.Effect of organic additives on copper dissolution for e-CMP.Microelectron Eng,2010,87:2187 |
| [8] | Lee H,Park B,Jeong H.Influence of slurry components on uniformity in copper chemical mechanical planarization.Microelectron Eng,2008,85:689 |
| [9] | Nagar M,Vaes J,Eli Y E.Potassium sorbate as an inhibitor in copper chemical mechanical planarization slurries.Part Ⅱ:effects of sorbate on chemical mechanical planarization performance.Electrochimica Acta,2010,55:2810 |
| [10] | Yang J C,Oh D W,Lee G W,et al.Step height removal mechanism of chemical mechanical planarization (CMP) for sub-nanosurface finish.Wear,2010,268:505 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%