This paper presents a new method based on spatial controlling in quantum well intermixing in InP/InGaAsP structures using ICP technology.The degree of bandgap energy shift in the same wafer can be controlled flexibly using masks with different duty ratios.With an optimal condition including ICP-RIE etching depth,SiO2 deposition,and RTA process,five different degrees of blue-shift with maximum of 75 nm were obtained in the same sample.The result shows that our method is an effective way to fabricate monolithic integration devices,especially in multi-bandgap structures.
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