This paper presents a low noise amplifier (LNA),which could work at an ultra-low voltage of 0.5 V and was optimized for WSN application using 0.13 μm RF-CMOS technology.The circuit was analyzed and a new optimization method for a folded cascode LNA was introduced.Measured results of the proposed circuit demonstrated a power gain of 14.13 dB,consuming 3 mW DC power,showing 1.96 dB NF and an input 1-dB compression point of-19.9 dBm.Both input power matching (S11) and output power matching (S22) were below 10 dB.The results indicate that this LNA is fully applicable to low voltage and low power applications.
参考文献
| [1] | Telli A,Askar M.CMOS LNA design for LEO space S-band applications.IEEE Can Conf Electr Comput Eng,2003:27 |
| [2] | Lee T H.The design of CMOS radio frequency integrated circuits.Cambridge,UK:Cambridge University Press,1998:197 |
| [3] | Hsiao C L,Weng R M,Lin K Y.A 0.6 V CMOS low noise amplifier for 2.4 GHz application.IEEE Asia-Pacific Conference on Circuit and System,December 2004:277 |
| [4] | Nguyen T K,Kin C H,Ihm G J,et al.CMOS low-noise amplifier design optimization techniques.IEEE Trans Microw Theory Tech,2004,52(5):1433 |
| [5] | Li Zhiqun,Chen Liang,Hao Zhang.Design and optimization of CMOS LNA with ESD protection for 2.4 GHz WSN application.Journal of Semiconductors,2011,32(10):15004 |
| [6] | Xuan K,Tsang K F,Lee W C.0.18 μm CMOS dual-band lownoise amplifier for ZigBee development.Electron Lett,2010,46(1):85 |
| [7] | Hsieh H H,Lu L H.Design of ultra-low-voltage RF frontends with complementary current-reused architectures.IEEE Trans Microw Theory Tech,2007,55(7):1445 |
| [8] | Wu D,Huang R,Wong W,et al.A 0.4-V low noise amplifier using forward body bias technology for 5 GHz application.IEEE Microw Wireless Compon Lett,2007,17(7):543 |
| [9] | Hsieh H H,Wang J H,Lu L H.Gain-enhancement techniques for CMOS folded cascode LNAs at low-voltage operations.IEEE Trans Microw Theory Tech,2008,56(8):1807 |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%