欢迎登录材料期刊网

材料期刊网

高级检索

A two-stage 2.5-5 GHz monolithic low-noise amplifier (LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology.To achieve wide operation bandwidth and low noise figure,the proposed LNA uses a wideband matching network and a negative feedback technique.Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain.The input and output return loss exceeded-10-dB across the band.The Power consumption of this LNA is 33 mW.According to the author's knowledge,this is the lowest power consumption LNA fabricated in 0.5-μm A1GaAs/GaAs pHEMT with the comparable performance.

参考文献

[1] Heins M S,Carroll J M,Kao M,et al.X-band GaAs mHEMT LNAs with 0.5 dB noise figure.IEEE MTT-S International Microwave Symposium Digest,2004:149
[2] Mokerov V G,Gunter V Y,Arzhanov S.X-band MMIC lownoise amplifier based on 0.15 μm GaAs pHEMT technology.International Crimeam Conference,2007:77
[3] Rosenbaum S E,Jelloian L M,Larson L E,et al.A 2-GHz three-stage AlInAs-GaInAs-InP HEMT MMIC low-noise amplifier.IEEE Microw Guided Wave Lett,1993,3(8):265
[4] Soyuer M,Plouchart J O,Ainspan H,et al.A 5.8 GHz 1-V low noise amplifier in SiGe bipolar technology.IEEE Radio Frequency Integrated Circuits Symp Dig,1997:19
[5] Choi B G,Lee Y S,Park C S,et al.A low noise on-chip matched MMIC LNA of 0.76 dB noise figure at 5 GHz for high speed wireless LAN applications.Gallium Arsenide Integrated Circuit.2000:143
[6] Zulfa H A,Chow Y H,Eng Y W.A low-voltage,tully-integrated 1.5-6 GHz low noise amplifier in E-mode pHEMT technology for multiband,multimode applications.European Microwave Integrated Circuit Conference,2008:306
[7] Huang H,Zhang H Y,Yin J J,et al.Enhancement mode pHEMT LNA with super low noise and high gain for S band application.Solid-State and Integrated Circuit Technology,2007:947
[8] Choi B G,Lee Y S,Yoon K S,et al.Low noise pHEMT and its MMIC LNA implementation for C-band applications.International Conference on Microwave and Millimeter Wave Technology,2000:56
[9] Ellinger F,Lott U,Bachtold W.Ultra low power GaAs MMIC low noise amplifier for smart antenna combining at 5.2 GHz.Radio Frequency Integrated Circuits (RFIC) Symposium,2000:157
[10] Wang J,Cen Y,Chen X.S-band PHEMT monolithic frequency variable receiver front-end.International Conference on Microwave and Millimeter Wave Technology Proceedings,1998:234
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%