In the design of phase-change memory (PCM),it is important to perform numerical simulations to predict the performances of different device structures.This work presents a numerical simulation using a coupled system including Poisson's equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change memory.This method discriminates the common numerical simulation of PCM cells,from which it applies Possion's equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change materials.The results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.
参考文献
| [1] | Lai S.Current status of the phase change memory and its future IEEE International Electron Devices Meeting,Technical Digest 2003:255 |
| [2] | Lacaita A L,Ielmini D,Mantegazza D.Status and challenges of phase change memory modeling.Solid-State Electron,2008,52(9):1443 |
| [3] | Xu Cheng,Liu Bo,Chen Yifeng.Switching characteristics of phase change memory cell integrated with metal-oxide-semiconductor field effect transistor. Chin Phys Lett,2008,25(5):1848 |
| [4] | Feng Gaoming,Liu Bo,Wu Liangcai,et al.Properties of W submicrotube heater electrode used for phase change memory.Chinese Journal of Semiconductors,2007,28(7):1134 |
| [5] | Kim D H,Merget F,F(o)rst M,et al.Three-dimensional simulation model of switching dynamics in phase change random access memory cells.J Appl Phys,2007,l01 (6):064512 |
| [6] | Http://ovonyx.com/technology/technology.com |
| [7] | Gong Yuefeng,Song Zhitang,Ling Yun,et al.Simulation of voltage SET operation in phase-change random access memories with heater addition and ring-type contactor for low-power consumption by finite element modeling.Chin Phys Lett,2010,27(6):068501 |
| [8] | Sentaurus Device User Guide,Version A-2007.12,Dec.2007 |
| [9] | Schmithusen B,Tikhomirov P,Lyumkis E.Phase-change memory simulations using an analytical phase space model.SISPAD:International Conference on Simulation of Semiconductor Processes and Devices,2008:57 |
| [10] | Peng C,Cheng L,Mansuripur M.Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media.J Appl Phys,1997,82(9):4283 |
| [11] | Wei Y,Wang L,Wang W.Numerical simulation of programming and read process for nano-scaled phase-change memory (PCM) cell.IEEE International Conference of Electron Devices and Solid-State Circuits,EDSSC,2009:529 |
- 下载量()
- 访问量()
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%