This paper presents a wideband low noise amplifier (LNA) for multi-standard radio applications.The low noise characteristic is achieved by the noise-canceling technique while the bandwidth is enhanced by gateinductive-peaking technique.High-frequency noise performance is consequently improved by the flattened gain over the entire operating frequency band.Fabricated in 0.18 μm CMOS process,the LNA achieves 2.5 GHz of -3 dB bandwidth and 16 dB of gain.The gain variation is within ±0.8 dB from 300 MHz to 2.2 GHz.The measured noise figure (NF) and average ⅡP3 are 3.4 dB and -2 dBm,respectively.The proposed LNA occupies 0.39 mm2core chip area.Operating at 1.8 V,the LNA drains a current of 11.7 mA.
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