ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering.The effect of substrate temperature on the structure,surtace morphology,optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer,a scanning electron microscope,a double beam spectrophotometer and the Hall system,respectively.The structural characteristics showed a dependence on substrate temperature.The resistivity of the films varied from 6.71 × 10-3 to 1.91 × 10-3 Ω·cm as the substrate temperature increased from 100 to 350 ℃.ITO (22 nm)/Ga2O3 (50 nm) films deposited at 300 ℃ exhibited a low sheet resistance of 373.3 Ω/□ and high deep ultraviolet transmittance of 78.97％ at the wavelength of 300 nm.
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