Pb(Zr0.52Ti0.48)O3 (PZT) thin films have been deposited on a p-type Si substrate separated by a polycrystalline silicon/SiO2 stacked buffer layer.The X-ray diffraction peaks of the PZT thin films prepared on the polycrystalline silicon annealed at different temperatures were measured.In addition,the polarization of the Pt/PZT/polycrystalline silicon capacitor has been investigated.The memory capacitor of the metal/ferroelectric/polycrystalline silicon/SiO2/semiconductor structure annealed at 650 ℃ exhibits a clockwise capacitance-voltage hysteresis loop due to the ferroelectric polarization of the PZT thin film.The memory window increases with increasing the area coupling ratio between the SiO2 capacitor and the PZT capacitor.
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